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Что (кто) такое bipolar transistor - определение

TRANSISTOR THAT USES BOTH ELECTRONS AND HOLES AS CHARGE CARRIERS

BJT; P-n-p transistor; N-p-n transistor; Bjt; Bipolar junction transistors; Bipolar Junction Transistor; Collector current; Bjt transistor; Emitter, base, and collector; Ebers-Moll; PNP (transistor polarity); Ebers-Moll model; PNP transistor; NPN transistor; Transistor beta; Ebers–Moll model; Bipolar transistor; Bipolar transistors; Power BJT; Junction transistor; P–n–p transistor; N–p–n transistor; H-parameter model; Emitter, base and collector; Emitter current; VBIC

Найдено результатов: 171

bipolar transistor

<electronics> A transistor made from a sandwich of n- and p-type semiconductor material: either npn or pnp. The middle section is known as the "base" and the other two as the "collector" and "emitter". When used as an amplifying element, the base to emitter junction is in a "forward-biased" (conducting) condition, and the base to collector junction is "reverse-biased" or non-conducting. Small changes in the base to emitter current (the input signal) cause either holes (for pnp devices) or free electrons (for npn) to enter the base from the emitter. The attracting voltage of the collector causes the majority of these charges to cross into and be collected by the collector, resulting in amplification. Contrast field effect transistor. (1995-10-04)

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier.

https://en.wikipedia.org/wiki/Bipolar_junction_transistor

BJT

Bipolar Junction Transistor (Reference: IC)

Heterostructure-emitter bipolar transistor

TRANSISTOR USING HETEROSTRUCTURE CONFINEMENT IN THE EMITTER

Heterojunction emitter bipolar transistor; Heterostructure emitter bipolar transistor

The Heterojunction-emitter bipolar transistor (HEBT), is a somewhat unusual arrangement with respect to emitter blocking of minority carriers. This is accomplished by using heterostructure confinement in the emitter, introducing an energy barrier to minority-carrier charge flow from the base.

https://en.wikipedia.org/wiki/Heterostructure-emitter_bipolar_transistor

Heterojunction bipolar transistor

TYPE OF BIPOLAR JUNCTION TRANSISTOR (BJT) WHICH USES DIFFERING SEMICONDUCTOR MATERIALS FOR THE EMITTER AND BASE REGIONS, CREATING A HETEROJUNCTION

Heterojunction Bipolar Transistor; DHBT; Pseudomorphic heterojunction bipolar transistor

The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz.

https://en.wikipedia.org/wiki/Heterojunction_bipolar_transistor

Insulated-gate bipolar transistor

THREE-TERMINAL POWER SEMICONDUCTOR DEVICE

IGBT; Insulated Gate Bipolar Transistor; IGBT transistor; Insulated gate bipolar transistor

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch, which, as it was developed, came to combine high efficiency and fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transistor

Bipolar transistor biasing

PROCESS NECESSARY FOR BJT AMPLIFIERS TO WORK CORRECTLY

Discrete bipolar transistor biasing; Voltage divider bias; Discrete Bipolar Transistor Biasing; BJT biasing

Bipolar transistors must be properly biased to operate correctly. In circuits made with individual devices (discrete circuits), biasing networks consisting of resistors are commonly employed.

https://en.wikipedia.org/wiki/Bipolar_transistor_biasing

IGBT

THREE-TERMINAL POWER SEMICONDUCTOR DEVICE

IGBT; Insulated Gate Bipolar Transistor; IGBT transistor; Insulated gate bipolar transistor

Insulated Gate Bipolar Transistor (Reference: IC)

Transistor-Transistor Logic

CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION

Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)

(TTL) A common semiconductor technology for building discrete digital logic integrated circuits. It originated from {Texas Instruments} in 1965. There have been several series of TTL logic: 7400: 10 ns propagation time, 10 mW/gate power consumption, obsolete; 74L00: Low power: higher resistances, less dissipation (1 mW), longer propagation time (30 ns); 74H00: High power: lower resistances, more dissipation: less sensitivity for noise; 74S00: Schottky-clamped: faster switching (3 ns, 19 mW) by using Schottky diodes to prevent the transistors from saturation; 74LS00: Low power, Schottky-clamped (10 ns, 2 mW); 74AS00: Advanced Schottky: faster switching, less dissipation, (1.5 ns, 10 mW); 74ALS00: Advanced Low power Schottky (4 ns, 1.3 mW). For each 74xxx family there is a corresponding 54xxx family. The 74 series are specified for operation at 0 - 70 C whereas the 54 (military) series can operate at -55 - 125 C See also CMOS, ECL.

LVTTL

CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION

Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)

Low Voltage Transistor Transistor Level (Reference: IC)

Википедия

Bipolar junction transistor

A bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor, uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching.

BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material. The junctions can be made in several different ways, such as changing the doping of the semiconductor material as it is grown, by depositing metal pellets to form alloy junctions, or by such methods as diffusion of n-type and p-type doping substances into the crystal. The superior predictability and performance of junction transistors quickly displaced the original point-contact transistor. Diffused transistors, along with other components, are elements of integrated circuits for analog and digital functions. Hundreds of bipolar junction transistors can be made in one circuit at very low cost.

Bipolar transistor integrated circuits were the main active devices of a generation of mainframe and minicomputers, but most computer systems now use CMOS integrated circuits relying on field-effect transistors. Bipolar transistors are still used for amplification of signals, switching, and in mixed-signal integrated circuits using BiCMOS. Specialized types are used for high voltage switches, for radio-frequency amplifiers, or for switching high currents.

https://en.wikipedia.org/wiki/Bipolar junction transistor